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A PROPOSED CAD MODEL BASED ON AMPLIFIED SPONTANEOUS EMISSION SPECTROSCOPY

F. V. Celebi1,*

Affiliation

  1. Baskent University, Faculty of Engineering, Etimesgut 06530 Ankara-Turkey

Abstract

Calculation of the optical quantities generally requires a large amount of computational time by using different theories, approximations and assumptions. In this study, a single, simple, new and an accurate computer aided design (CAD) model is successfully developed in strained quantum-well (QW) laser diodes in order to obtain the critical quantities and their dependences on wavelength and injection currents. These critical quantities are the modal gain difference, the induced refractive index difference, and the linewidth enhancement factor (Alpha parameter). The model is based on multilayer perceptron network (MLP) which is among the most important artificial neural network (ANN) architectures. Both the training and the test results are in very good agreement with previously designed InGaAsP strained QW laser diode results for long wavelength communication systems. The method is very useful for time saving purposes after finding the most suitable network configuration and can be easily used in the CAD design of optical communication systems..

Keywords

Artificial neural Network, Laser diodes, Optical gain, Refractive index change, Linewidth enhancement factor, Optimisation.

Submitted at: March 23, 2005
Accepted at: May 26, 2005

Citation

F. V. Celebi, A PROPOSED CAD MODEL BASED ON AMPLIFIED SPONTANEOUS EMISSION SPECTROSCOPY, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1573-1579 (2005)