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A RAMAN SPECTROSCOPIC STUDY OF DEFECTS IN Bi4Ge3O12 CRYSTALS

P. M. Rafailov1,2,* , T. I. Milenov3, M. N. Veleva3, C. Thomsen1, M. M. Gospodinov3

Affiliation

  1. Institut für Festkörperphysik der Technischen Universität Berlin, Sekr. PN 5-4, Hardenbergstr. 36, D-10623 Berlin, Germany
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

We performed spatially resolved polarized Raman measurements on a Czochralski grown Bi4Ge3O12 crystal, and observed significant spot-dependent changes in the relative scattering intensity of some A1, E and F2 modes. In view of the different selection rules for these modes, such behaviour implies that there are regions with different crystal orientations. We ascribe this to the presence of two-dimensional structural defects with high concentrations and strongly non-uniform distributions..

Keywords

Raman spectroscopy, Phonons, Lattice defects.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

P. M. Rafailov, T. I. Milenov, M. N. Veleva, C. Thomsen, M. M. Gospodinov, A RAMAN SPECTROSCOPIC STUDY OF DEFECTS IN Bi4Ge3O12 CRYSTALS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 473-476 (2005)