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A single 3.3 V 2.4–2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor

CHEN-KUO CHU1, HOU-KUEI HUANG1, HONG-ZHI LIU1, JUI-CHIEH CHIU1, CHE-HUNG LIN1, CHUAN-CHIEN HSU2, CHANG-LUEN WU2, CHIAN-SERN CHANG2, YEONG-HER WANG1,*

Affiliation

  1. Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan, 701 Taiwan
  2. Transcom Inc., Tainan, 741 Taiwan

Abstract

A mesa-etched layer at the source port, which serves as a resistor for self-biasing, is incorporated to simplify the fabrication processes and to provide a single bias in a PHEMT MMIC. The mesa-etched layer is also implemented in a two-stage 2.4GHz–2.5GHz, 3.3V, 23.5dBm self-biased AlGaAs/InGaAs/GaAs PHEMT MMIC as high gain and high linearity power amplifiers for wireless local-area network applications..

Keywords

PHEMT, MMIC, Self-bias resistor, Power amplifier.

Submitted at: May 29, 2007
Accepted at: Sept. 18, 2007

Citation

CHEN-KUO CHU, HOU-KUEI HUANG, HONG-ZHI LIU, JUI-CHIEH CHIU, CHE-HUNG LIN, CHUAN-CHIEN HSU, CHANG-LUEN WU, CHIAN-SERN CHANG, YEONG-HER WANG, A single 3.3 V 2.4–2.5 GHz high linearity PHEMT MMIC power amplifier using an Mesa-etched layer as the self-biased resistor, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 9, pp. 2809-2812 (2007)