"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Absorption spectra and extrinsic photoconductivity of Cu and Cd doped GaSe single – crystal films

E. CUCULESCU1,* , Ig. EVTODIEV1, M. CARAMAN1, G. G. RUSU2

Affiliation

  1. Kishinev State University, 60 A Mateevici Str., Kishinev, MD-2009, Republic of Moldova
  2. “Al. I. Cuza” University, 11 Carol I Bd., 700506 Iasi, Romania

Abstract

GaSe single crystal films were doped during growth process with Cu or Cd atoms with concentration ranged between 0.05 and 0.50 at. %. Single crystal films (with thickness about 0.5 µm) were obtained by mechanical splitting of bulk single crystals. Impurity concentration was determined using atomic emission spectroscopy. Spectral dependences of absorption coefficient and photoconductivity were studied in the range 1.50 eV – 3.70 eV. It was experimentally established that the absorption spectra have an additional absorption band and its corresponding energy depends on the nature (Cu or Cd) and concentration of the doping atoms. Also, independently on the presence of the dopant, other two absorption bands in the IR region are present..

Keywords

Thin films, Cu and Cd doped GaSe crystals, Optical absorbtion, Photoconductivity.

Submitted at: Oct. 14, 2005
Accepted at: Jan. 26, 2006

Citation

E. CUCULESCU, Ig. EVTODIEV, M. CARAMAN, G. G. RUSU, Absorption spectra and extrinsic photoconductivity of Cu and Cd doped GaSe single – crystal films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 119-122 (2006)