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AFM AND SEM INVESTIGATIONS OF ION BEAM SYNTHESIZED Mg2Si PRECIPITATES IN Si SUBSTRATES

Ch. Angelov1, V. Mikli2,* , B. Amov1, E. Goranova3

Affiliation

  1. Institute for Nuclear Research and Nuclear Energy, BAS, 72 Tzarigradsko Chaussee Blvd., Sofia 1784, Bulgaria
  2. Centre for Materials Research, Talin Technical University, Ehitajate 5, Talin 79086, Estonia
  3. Central Laboratory of Solar Energy and New Energy Sources, BAS, 72 Tzarigradsko Chaussee Blvd., Sofia 1784, Bulgaria

Abstract

The Mg2Si phase was fabricated using ion beam synthesis with high doses of 24Mg+ implantation in Si substrates, followed by rapid thermal annealing. The chemical composition of the as-implanted and of samples annealed under different conditions was studied by X-ray energy dispersive spectroscopy. The effect of the different doses and annealing time on the surface morphology was investigated by scanning electron microscopy and atomic force microscopy..

Keywords

Ion implantation, Mg2Si, Thin films, RTA, SEM, AFM.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Ch. Angelov, V. Mikli, B. Amov, E. Goranova, AFM AND SEM INVESTIGATIONS OF ION BEAM SYNTHESIZED Mg2Si PRECIPITATES IN Si SUBSTRATES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 369-372 (2005)