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AlN FILMS OBTAINED BY A BROAD ENERGY NITROGEN ION IMPLANTATION AND RAPID THERMAL ANNEALING PROCESS

K. G. Grigorov1,* , I. Nedkov1, G. Beshkov2, Ch. Angelov2, H. S. Maciel3, W. Matz4, R. Groetzchel4, N. Velchev5

Affiliation

  1. Institute of Electronics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Technological Institute of Aeronautics, Sao Paulo, Brazil
  4. Institute of Ion Beam Physics and Material Research, FZR, 01314 Dresden, Germany
  5. University of Plovdiv, Dep. of Electronics, 24 Tzar Asen, 4000 Plovdiv, Bulgaria

Abstract

The paper describes structural, morphological and electrical investigations of thin AlN films. The films were obtained by broad energy range ion bombardment (BERIB) of aluminium, with doses ranging from 1.5 × 1017 cm-2 to 6 × 1017 cm-2. This technique, to our knowledge, has not been described previously in the literature. The ion implantation was carried out with two species - nitrogen atoms with energies from 50, 30, and 20 keV and nitrogen ions with energies of 50 and 30 keV. These energy values were chosen in order to ensure a continuous and wide nitride layer, at least of 150 nm thick..

Keywords

Aluminium nitrides, RTA, PECVD, Ion implantation and characterization.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

K. G. Grigorov, I. Nedkov, G. Beshkov, Ch. Angelov, H. S. Maciel, W. Matz, R. Groetzchel, N. Velchev, AlN FILMS OBTAINED BY A BROAD ENERGY NITROGEN ION IMPLANTATION AND RAPID THERMAL ANNEALING PROCESS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 381-384 (2005)