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AMORPHOUS ARSENIC CHALCOGENIDE FILMS MODIFIED USING RARE-EARTH COMPLEXES

S. A. Kozyukhin1,* , A. R. Fairushin2, E. N. Voronkov2

Affiliation

  1. Kurnakov Institute of General and Inorganic Chemistry of RAS, Leninskii pr., 31, Moscow, 119991, Russia
  2. Moscow Power Engineering Institute (Technical University), Krasnokazarmennaya ul., 14, Moscow, 111250, Russia

Abstract

The optical and electrical properties of thin arsenic chalcogenide As-X (X=S, Se) films modified by rare-earth complexes with organic mixed-ligands have been studied. There were two types of complexes used: europium dipivaloylmethanate Eu(thd)3 and lanthanide diethyldithiocarbamates Ln(ddtc)3 (Ln=Pr, Eu). It was shown that the use of rare-earth mixed-complexes with neighbor volatility to chalcogenide volatility permits the deposition of amorphous films by thermal evaporation. The decrease in absorption coefficient at the Urbach’s edge after introduction of the complexes containing oxygen in arsenic selenide has been revealed. The type of organic ligands incorporated in amorphous matrix determinates the shape of current-voltage characteristic. Such complexes decrease considerable the activation energy for electrical conduction as well. The observed results have been discussed on the basis of different levels of structural modification in non-crystalline materials..

Keywords

Amorphous chalcogenides, Rare-earth complexes, Optical properties, Current-voltage characteristics.

Submitted at: Jan. 27, 2005
Accepted at: May 26, 2005

Citation

S. A. Kozyukhin, A. R. Fairushin, E. N. Voronkov, AMORPHOUS ARSENIC CHALCOGENIDE FILMS MODIFIED USING RARE-EARTH COMPLEXES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1457-1461 (2005)