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AMORPHOUS THIN FILMS BASED ON PARAFFIN DOPED CHALCOGENIDES, PREPARED BY PULSED LASER DEPOSITION

M. Popescu1,* , F. Sava1, A. Lörinczi1, I. N. Mihailescu2, G. Socol2, E. Axente2, I. Kaban3, W. Hoyer3

Affiliation

  1. National Institute of Materials Physics, Bucharest-Magurele, P. O. Box MG. 7, Romania
  2. National Institute of Lasers, Plasma and Radiation Physics, Bucharest - Magurele, P. O. Box MG. 6, Romania
  3. Technische Universität Chemnitz, Institut für Physik, D-09107 Chemnitz, Germany

Abstract

A chalcogenide material of composition Se42S58, doped by 10 wt.% paraffins has been prepared as thin films by pulsed laser deposition. The structural properties of the films have been investigated by X-ray diffraction. Sample stabilization was carried out by annealing at temperatures around 100 oC..

Keywords

Paraffin doped chalcogenide, Selenium-sulfur, Thin film, Pulsed laser deposition.

Submitted at: Feb. 2, 2004
Accepted at: March 15, 2004

Citation

M. Popescu, F. Sava, A. Lörinczi, I. N. Mihailescu, G. Socol, E. Axente, I. Kaban, W. Hoyer, AMORPHOUS THIN FILMS BASED ON PARAFFIN DOPED CHALCOGENIDES, PREPARED BY PULSED LASER DEPOSITION, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 163-167 (2004)