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ANALYTICAL MODEL OF ELECTRIC FIELD IN HETEROJUNCTION REGION OF HFET STRUCTURE

P. M. Lukic1,* , R. M. Ramovic2, R. M. Šašic3

Affiliation

  1. Faculty of Mechanical Engineering, University of Belgrade, Kraljice Marije 16, 11120 Belgrade, Serbia and Montenegro
  2. Faculty of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia and Montenegro
  3. Faculty of Technology and Metallurgy, University of Belgrade, Karnegijeva 4, 11120 Belgrade, Serbia and Montenegro

Abstract

A new analytical model of electric field in heterojunction region of heterostructure field effect transistor (HFET), is presented. Electric field dependences on surface density of two dimensional electron gas and surface density of ionized acceptors in buffer layer are included in developed model. The expression of the electric field intensity is given by using the new correction coefficient. The new coefficient emphasizes more precisely extremely asymmetric spreading of the electric field in the vicinity of a heterojunction. Proposed model is simple and it can be straightforwardly implemented. It can be applied to quite different types of HFETs. The results derived from simulations based on the exposed model are in very good agreement with the already known ones, available in literature..

Keywords

Heterostructure Field Effect Transistor (HFET), Electric Field, Analytical Model.

Submitted at: April 25, 2005
Accepted at: May 26, 2005

Citation

P. M. Lukic, R. M. Ramovic, R. M. Šašic, ANALYTICAL MODEL OF ELECTRIC FIELD IN HETEROJUNCTION REGION OF HFET STRUCTURE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1611-1617 (2005)