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ANISOTROPIC- MAGNETORESISTANCE INTEGRATED SENSORS

S. Andreev1,* , P. Dimitrova1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

In this paper. a short overview is presented of the most widely used types of solid state magnetic sensor. These sensors are applied in many areas, such as the measurement of magnetic fields and in compasses, angle/position sensors and current sensing. Hall effect, AMR (Anisotropic Magnetorestance-effect) and GMR (Giant Magnetoresistance-effect) sensors are the most frequently used. In spite of the later appearance of the GMR structures, AMR sensors are still preferred in cases when high sensitivity, flexibility of design and compatibility with standard microelectronics technology are needed. A description of the basic mechanisms of the normal AMR effect and of the so-called “barber pole” effect is presented, and some of the main problems that have to be solved when designing and producing AMR devices are underlined. A model is proposed for the estimation of the effectiveness of real barber pole structures. Experimental results are reported and discussed, concerning the design and production of single-stripe resistors and barber pole bridges, based on a technology with magnetization after annealing. Conclusions are drawn about the compatibility of this technology with CMOS technology..

Keywords

AMR, Thin films, Magnetic sensors.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Andreev, P. Dimitrova, ANISOTROPIC- MAGNETORESISTANCE INTEGRATED SENSORS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 199-206 (2005)