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ANOMALOUS CONDUCTIVITY IN Au-DOPED CHALCOGENIDE GLASSY SEMICONDUCTORS

A. A. Babaev1,* , I. K. Kamilov1, S. B. Sultanov1, A. M. Askhabov1, P. P. Khokhlachev1

Affiliation

  1. Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences, Makhachkala, Russia

Abstract

The experimental results for temperature dependence of the glass conductivity of (As2S3)100-xAux and (As2S5)100-xAux (0.04‡‡0) are presented. There are found: two fractures on the temperature dependence of the conductivity in compounds with small gold concentration, an abnormal behaviour of the conductivity in the temperature range 360>T>300 K. The major part of the impurity atoms fills the volume of the glass semiconductor, saturates all its valence bounds forming a series of solid solutions what leads to a change of band gap Eg. A small part of the impurity atoms, having the unusual closest neighbourhood, not saturates its valence bonds and as a result, forms an electrical active impurity level, defining the conductivity..

Keywords

Chalcogenide, Glass, Conductivity, An-doped As2S3.

Submitted at: May 19, 2005
Accepted at: July 21, 2005

Citation

A. A. Babaev, I. K. Kamilov, S. B. Sultanov, A. M. Askhabov, P. P. Khokhlachev, ANOMALOUS CONDUCTIVITY IN Au-DOPED CHALCOGENIDE GLASSY SEMICONDUCTORS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2013-2016 (2005)