"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

APPLICATION OF SC-SIMUL – NUMERICAL SIMULATION FOR THIN-FILM SILICON BASED DEVICES

R. Brüggemann1,* , M. Rösch2

Affiliation

  1. Institut für Physik, Carl von Ossietzky Universität Oldenburg, 26111 Oldenburg, Germany
  2. Infineon Technologies Austria AG

Abstract

The publicly available device modelling tool SC-Simul allows both stationary and time-dependent modelling of a number of experiments with devices like p-i-n or heterojunction diodes. We show applications of SC-Simul and model the time-dependent response by studying an amorphous silicon p-i-n diode and voltage switching. For amorphous silicon/crystalline silicon heterodiodes, we study the validity of analytic expressions for the dark current by comparison with numerical results. Modelling results show the significant influence of interface defects in these heterodiodes on the simulated dark current, electroluminescence and electrically-detected magnetic resonance signal..

Keywords

Device modelling, Solar cells, Computer simulation, Silicon.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

R. Brüggemann, M. Rösch, APPLICATION OF SC-SIMUL – NUMERICAL SIMULATION FOR THIN-FILM SILICON BASED DEVICES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 65-72 (2005)