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ARGON ION ACTIVATED DEPOSITION OF SiO2 FILMS

S. Kitova1,* , S. Youroukov1, Tz. Babeva1, V. Denishev1, G. Danev1

Affiliation

  1. Central Laboratory of Photoprocesses “Acad. J .Malinowski”, BAS, Acad. G. Bonchev str., bl.109, Sofia 1113, Bulgaria

Abstract

In this paper we report our first results on the influence of the energy and current density of Ar ions in the background atmosphere on the properties of e-beam evaporated SiO2 films, which are not directly bombarded by the energetic ions. Ar ions are obtained with electron cyclotron resonance source (ECR). The change of optical constants, free volume, environmental stability and adhesion of the films to the different substrates are followed..

Keywords

SiO2 films, ECR ion beam processing, Optical properties, Environmental stability, Adhesion.

Submitted at: Aug. 24, 2005
Accepted at: Sept. 22, 2005

Citation

S. Kitova, S. Youroukov, Tz. Babeva, V. Denishev, G. Danev, ARGON ION ACTIVATED DEPOSITION OF SiO2 FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2613-2618 (2005)