"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

ASSESSMENT OF InGaSb CRYSTALS BY CATHODO-LUMINESCENCE MICROSCOPY AND SPECTROSCOPY

M. F. Chioncel1, C. Díaz-Guerra1, J. Piqueras1,* , N. Duhanian2, T. Duffar2

Affiliation

  1. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
  2. EPM-MADYLAM / ENSHMG, BP 35, 38042 St Martín d´Hères, France

Abstract

Low band-gap InGaSb crystals are of interest for the development of thermo-photo-voltaic (TPV) cells and other devices operating in the infrared spectral range. In this work, cathodoluminescence (CL) in the scanning electron microscope (SEM) has been applied to study the homogeneity of InGaSb material grown by the vertical Bridgman technique with regard to effective incorporation of In to the ternary alloy and the nature and distribution of defects influencing the luminescence properties of this semiconductor. Back-scattered electron imaging and wavelength dispersive X-ray mapping were used as complementary techniques to CL for analysis of chemical composition and element distribution. The results show that local CL spectra provide information on the effective formation of the alloy, not revealed by other techniques..

Keywords

Cathodoluminescence, InGaSb, Defect formation, TPV cells.

Submitted at: Jan. 28, 2004
Accepted at: March 15, 2004

Citation

M. F. Chioncel, C. Díaz-Guerra, J. Piqueras, N. Duhanian, T. Duffar, ASSESSMENT OF InGaSb CRYSTALS BY CATHODO-LUMINESCENCE MICROSCOPY AND SPECTROSCOPY, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 237-241 (2004)