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ATOMIC SCALE STRUCTURE OF Ge30As4S66

F. Sava1,* , A. Anghel1, I. Kaban2, W. Hoyer2, M. Popescu1

Affiliation

  1. National Institute R&D of Materials Physics, Bucharest – Magurele, P.O. Box MG. 7, Romania
  2. Technical University Chemnitz, Institute of Physics, Chemnitz, Germany

Abstract

The structure of a glassy sample of Ge30As4S66 has been measured by means of synchrotron radiation. X - ray diffraction data were processed and the atomo-electronic radial function (AERDF) was calculated. The high resolution AERDF curve allowed for an accurate determination of the first order distances between the atoms and the coordination numbers. A model of spatial structure, based on the concept of raft configuration was tested. An other model of the structure based on the continuous random network concept (CRN) was tried. The general conclusion drawn from this study supports the idea that raft and disordered configurations interlinked so that the dangling bonds in the structure be minimized, is the best model for such type of glass..

Keywords

Ge-As-S, Chalcogenide, Synchrotron radiation, Modelling, Outrigger raft structure, Continuous random model.

Submitted at: July 5, 2005
Accepted at: July 21, 2005

Citation

F. Sava, A. Anghel, I. Kaban, W. Hoyer, M. Popescu, ATOMIC SCALE STRUCTURE OF Ge30As4S66, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1971-1975 (2005)