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BAR-CONFIGURATION IN HALL MEASUREMENTS WITH GaAs

R. V. Ghita1,* , C. Logofatu1, C. Negrila1, M. F. Lazarescu1, A. S. Manea1, V. Ciupina2

Affiliation

  1. National Institute of Materials Physics, P.O. Box MG 7, Magurele, Bucharest, Romania
  2. Department of Physics, Ovidius University of Constanta, RO-8700, Constanta, Romania

Abstract

The electrical and transport properties of GaAs crystals such as resistivity (r), mobility (m) and carrier concentration (n) depend on the purity and defects of a particular crystal. These parameters are normally obtained by performing a simple Hall effect analysis in a bar configuration. The technical procedure is connected with the design of appropriate contacts for Hall bar configuration. In order to ensure good ohmic contacts on GaAs, thin metal layers of Au-Ge-Ni have been deposited in high vacuum followed by heat treatment in low vacuum. Hall effect measurement is important for checking the quality of the GaAs wafers. We analyzed various GaAs wafers with (100) and (110), orientation obtained by LEC and HB methods. The resistivity of the wafers varied from low resistivity, n-type doped crystals (n = 1018 cm-3), to high resistivity crystals (n = 1014 cm-3). This paper presents the data of Hall characterization of wafers cut from GaAs crystals grown by different methods (LEC, HB)..

Keywords

GaAs crystal, Hall measurement, Bar-configuration, Transport properties.

Submitted at: Nov. 5, 2002
Accepted at: March 12, 2003

Citation

R. V. Ghita, C. Logofatu, C. Negrila, M. F. Lazarescu, A. S. Manea, V. Ciupina, BAR-CONFIGURATION IN HALL MEASUREMENTS WITH GaAs, Journal of Optoelectronics and Advanced Materials Vol. 5, Iss. 1, pp. 359-363 (2003)