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BIAS VOLTAGE DEPENDENCE PROPERTIES OF DC REACTIVE MAGNETRON SPUTTERED INDIUM OXIDE FILMS

P. Mohan Babu1,* , B. Radhakrishna2, G. Venkata Rao1, P. Sreedhara Reddy1, S. Uthanna1

Affiliation

  1. Department of Physics, Sri Venkateswara University, Tirupati – 517 502, India
  2. Department of Physics, PBR Visvodaya Institute of Technology and Science, Kavali – 524 201, India

Abstract

Thin films of indium oxide were deposited by dc reactive magnetron sputtering onto glass substrates held at various bias voltages and temperatures. The films formed without substrate biasing and substrate heating were amorphous. The films deposited with substrate heating and / or substrate biasing were polycrystalline with predominant (222) orientation. The influence of substrate bias on the structural, electrical and optical properties was systematically studied. The films formed at a substrate temperature of 473 K and substrate bias voltage of –100 V resulted in transparent conducting films with electrical resistivity of 1.8 · 10-3 W cm, optical transmittance of 85% and figure of merit of 1.1 · 10-3 W-1..

Keywords

Indium oxide films, Magnetron sputtering, Structure, Electrical and optical properties.

Submitted at: June 16, 2003
Accepted at: March 15, 2004

Citation

P. Mohan Babu, B. Radhakrishna, G. Venkata Rao, P. Sreedhara Reddy, S. Uthanna, BIAS VOLTAGE DEPENDENCE PROPERTIES OF DC REACTIVE MAGNETRON SPUTTERED INDIUM OXIDE FILMS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 205-210 (2004)