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Carrier capture efficiency and amplification properties of asymmetrical multiple quantum well optical amplifiers

V. V. LYSAK1,2,* , I. A. SUKHOIVANOV3, YONG TAK LEE1

Affiliation

  1. Department of information and communication, Gwangju Institute of science and technology (GIST), 1 Oryong-dong, Buk-ku, Gwangju, 500-712, Republic of Korea
  2. Laboratory “Photonics”, Kharkov National University of Radio Electronics, 14, Lenin av., Kharkov, 61166, Ukraine
  3. Departamento de Electronica, FIMEE, Guanajuato University, P.O. Box 215-A, Salamanca, GTO, 36730, Mexico

Abstract

A numerical model for calculating the carrier transport properties in asymmetrical multiple quantum-we l (AMQW) structures is extended with more exact calculation of carrier-dependent capture efficiency for each QW including internal optical field in the whole structure. Using this extended model, the amplification spectra of an asymmetrical 6-QW SOA are calculated. The simulation results show excellent agreement with experimental data over the whole range of carrier injection and for a wavelength range of more than 160 nm..

Keywords

Asymmetrical multiple quantum-well semiconductor optical amplifier, Carrier transport, Modeling.

Submitted at: Feb. 15, 2006
Accepted at: March 23, 2006

Citation

V. V. LYSAK, I. A. SUKHOIVANOV, YONG TAK LEE, Carrier capture efficiency and amplification properties of asymmetrical multiple quantum well optical amplifiers, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 855-859 (2006)