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Cathodoluminescence of Ga1-xInxAsySb1-y epitaxial layers

C. CHÈZE1, B. MÉNDEZ1, J. PIQUERAS1,* , V CORREGIDOR2

Affiliation

  1. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, 28040 Madrid, Spain
  2. Instituto Tecnológico e Nuclear, E.N. 10, Apartado 21, 2686-953 Sacavém, Portugal

Abstract

Quaternary Ga1-xInxAsySb1-y layers lattice matched to a GaSb substrate are of interest for applications in the infrared range. In this work, the luminescence of Ga1-xInxAsySb1-y layers grown on GaSb by metal organic vapor phase epitaxy (MOVPE) with different In and As contents, has been studied by cathodoluminescence (CL) in a scanning electron microscope (SEM). CL images show a cellular structure which indicates the presence of dislocations decorated by recombination centers. Band gap values of 0.735 eV and 0.717 eV were measured from the CL spectra of two samples with diferent In content. This result is analyzed in the frame of existing theoretical models relating band gap with In and As content, in quaternary lattice matched layers. The band gap values are in good agreement with results of atomistic pseudopotential calculations..

Keywords

Cathodoluminescence, Ga-In-As-Sb, Epitaxial layers, Band gap.

Submitted at: Nov. 16, 2005
Accepted at: Jan. 26, 2006

Citation

C. CHÈZE, B. MÉNDEZ, J. PIQUERAS, V CORREGIDOR, Cathodoluminescence of Ga1-xInxAsySb1-y epitaxial layers, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 304-307 (2006)