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CHANGES IN THE ELECTRONIC STRUCTURE OF Ge-As-S THIN FILMS AFTER ILLUMINATION

V. Pamukchieva1, E. Skordeva1,* , D. Arsova1, M.-F. Guimon2, D. Gonbeau2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Laboratoire de Chimie Théorique et Physicochimie Moleculaire, UMR CNRS 5624, 2 Avenue du Président Angot, 64053 Pau Cedex 09, France

Abstract

The electronic structure of Ge-As-S glasses and films has been studied by means of X-ray photoelectron spectroscopy (XPS). Several compositions from two lines (Ge2S3 – As2S3 and GeyAsyS100-2y) of the glass-forming region were investigated. The study was carried on the Ge3p, As3d and S2p core peaks in glasses and evaporated from them thin films. Spectra were recorded before and after illumination and/or annealing of the films. Differences between the relative chemical shift of the core peaks connected with changes initiated by illumination and/or annealing are checked and discussed..

Keywords

X-ray photoelectron spectroscopy, Core level peaks, Photoinduced changes.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

V. Pamukchieva, E. Skordeva, D. Arsova, M.-F. Guimon, D. Gonbeau, CHANGES IN THE ELECTRONIC STRUCTURE OF Ge-As-S THIN FILMS AFTER ILLUMINATION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1265-1270 (2005)