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Characteristics of boron thin films obtained by TVA technology

G. MUSA1,2, R. VLADOIU1,* , V. CIUPINA1, C. P. LUNGU2, I. MUSTATA2, S. PAT3, T. AKAN3, N. EKEM3

Affiliation

  1. Department of Physics, Ovidius University, Mamaia 124,900527, Constanta, Romania
  2. National Institute for Laser, Plasma and Radiation Physics POBox MG-36, Magurele, Bucharest, Ramania
  3. Osmangazi Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, Eski ehir, Türkiye

Abstract

In this paper we report the results on the characterization of boron thin film deposited by TVA method. After finishing the successive depositions, the probes covered with boron thin films were analyzed using various techniques: 1) AFM analysis - we obtained a low roughness of the deposited film (less than 10 nm). 2) SEM images analysis - SEM with magnification of 5000 or 10 000 shows again the smoothness of the films as well as the lack of droplets which appears for example in cathodic arc plasma. 3) HRTEM images indicate the d-spacing corresponding to a rhomboedral lattice space group R-3m with a=10.92 Å and c = 23.81Å parameters, according with the calculated data from the electron diffraction pattern. The obtained thin films were of high quality and the evaporation process quite stabile in spite of the used high voltages and arc currents to support the TVA discharge. Diffusion and boron carbide producing at carbon crucible interaction with evaporated boron have been observed..

Keywords

Boron film deposition, TVA technology, Characterization.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

G. MUSA, R. VLADOIU, V. CIUPINA, C. P. LUNGU, I. MUSTATA, S. PAT, T. AKAN, N. EKEM, Characteristics of boron thin films obtained by TVA technology, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 617-620 (2006)