"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

CHARACTERIZATION OF HEAT- AND PHOTO- ANNEALED GexSb40-xS60 FILMS BY X-RAY PHOTOELECTRON SPECTROSCOPY

R. K. Debnath1, A. G. Fitzgerald1, K. Christova2,* , A. Manov2

Affiliation

  1. Carnegie Laboratory of Physics, Department of Electronic Engineering and Physics, University of Dundee, Dundee DD1 4HN, Scotland, UK
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 178 Sofia, Bulgaria

Abstract

The chemical bonding structure of heat- and photo- treated GexSb40-xS60 films (x = 5, 15, 20, 25, 27), evaporated on silicon substrates, has been studied by X-ray photoelectron spectroscopy (XPS). The photoelectron spectra of Ge and Sb for treated films, and their comparison to those of ‘fresh‘ films, reveal that Sb2S5 is not an intrinsic feature of the films. From a consideration of the spectral data on the peak positions of Ge 3d and Sb 4d at each value of x, and for all types of treatment, the conclusion is drawn that annealing leads to a looser film structure, and that illumination changes the structure significantly at x = 25. It is suggested that the reorganization of the Ge component is the main reason for the binding energy change of the Sb 4d. The spectra from doubly treated films show that the binding energy of the Sb 4d depends on the sequence of treatments. It is found that there is no significant change in the binding energies of deeper core electrons..

Keywords

X-ray photoelectron spectroscopy (XPS), Amorphous film, Heat annealing, Photo annealing.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

R. K. Debnath, A. G. Fitzgerald, K. Christova, A. Manov, CHARACTERIZATION OF HEAT- AND PHOTO- ANNEALED GexSb40-xS60 FILMS BY X-RAY PHOTOELECTRON SPECTROSCOPY, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 353-356 (2005)