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Chemical structure of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study

I. STANCA1,2,*

Affiliation

  1. Department of Physics, University of Oradea, Oradea, 410087, Romania
  2. Department of Physics, Trinity College Dublin, Dublin 2, Ireland

Abstract

We report on a study of the compositional and chemical properties of films deposited on silicon by excimer laser beam (Lambda Physik Compex 205, KrF, 248 nm wavelength, 25 ns pulse duration) of a ceramic AlN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the Al 2p, N 1s and O 1s core electrons indicates the formation of near-stoichiometric aluminum nitride in films grown in a vacuum (10-7–10-5 mbar), whereas in films grown under an oxygen partial pressure of 0.1 mbar, only aluminum oxide formation was observed..

Keywords

AlN films, Pulsed laser deposition, X-ray photoelectron spectroscopy.

Submitted at: Dec. 2, 2005
Accepted at: May 18, 2006

Citation

I. STANCA, Chemical structure of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 1148-1151 (2006)