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Comparison of photostructural changes induced by continuous and pulsed laser in chalcogenide glass

P. LUCAS1,* , E. A. KING1, A. DORAISWAMY1

Affiliation

  1. Department of Materials Science and Engineering, University of Arizona, Tucson AZ 85721 USA

Abstract

Photorelaxation, photoexpansion and photodarkening measurements were performed during irradiation with CW and pulsed sub-bandgap light of Ge-Se glass. The kinetics and effect of irradiation appear to be mostly identical when irradiating with a CW or a low intensity, high repetition rate femtosecond laser. The entropy decrease observed during pulsed irradiation is inconsistent with the mechanism for patterning silicate glass with high intensity femtosecond lasers. Instead, the similarity between al photostructural change observed during CW and pulsed irradiation suggests that a high repetition rate femtosecond laser essentially acts as a CW laser when used at low intensity with a sub-bandgap wavelength on a chalcogenide glass. The only difference observed is due to the formation of interference fringes in the case of CW irradiation, which results in the formation of a Bragg reflector not observed with pulsed irradiation..

Keywords

Chalcogenide glass, Laser writing, Photostructural change.

Submitted at: Jan. 3, 2006
Accepted at: March 23, 2006

Citation

P. LUCAS, E. A. KING, A. DORAISWAMY, Comparison of photostructural changes induced by continuous and pulsed laser in chalcogenide glass, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 776-779 (2006)