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COMPUTER MODELLING OF MULTI-TRAPPING AND HOPPING TRANSPORT IN DISORDERED SEMICONDUCTORS

C. Main1,* , J. M. Marshall2, S. Reynolds3

Affiliation

  1. University of Dundee, Division of Electronic Engineering and Physics, Nethergate, Dundee DD1 4HN
  2. University of Wales Swansea, Singleton Park, Swansea SA2 8PP, United Kingdom
  3. University of Abertay Dundee, School of Computing and Advanced Technologies, Bell Street, Dundee DD1 1HG, United Kingdom

Abstract

In this paper we demonstrate a simple computational procedure for the simulation of transport in a disordered semiconductor in which both multi-trapping and hopping processes are occurring simultaneously. We base the simulation on earlier work on hopping transport, which used a Monte-Carlo method. We use the same model concepts, but employ a stochastic matrix approach to speed computation, and include also multi-trapping transitions between localised and extended states. We use the simulation to study the relative contributions of extended state conduction (with multi-trapping) and hopping conduction (via localised states) to transient photocurrents, for various distributions of localised gap states, and as a function of temperature. The implications of our findings for the interpretation of transient photocurrents are examined..

Keywords

Hopping transport, Disordered semiconductors, Computer simulation.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

C. Main, J. M. Marshall, S. Reynolds, COMPUTER MODELLING OF MULTI-TRAPPING AND HOPPING TRANSPORT IN DISORDERED SEMICONDUCTORS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 107-114 (2005)