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CURRENT – VOLTAGE STUDIES ON VACUUM EVAPORATED In70Se30 THIN FILMS

C. Viswanathan1, G. G. Rusu2, D. Mangalaraj1,3,* , Sa. K. Narayandass1, J. Yi3

Affiliation

  1. Thin film laboratory, Department of Physics, Bharathiar University, Coimbatore, India
  2. Solid State Department, “Al. L. Cuza” University, Romania
  3. School of Information and Communication Engineering, Sungkyunkwan University, Suwon Korea

Abstract

In70Se30 thin films were deposited onto glass substrates at room temperature by thermal evaporation technique. The structure and surface morphology of the deposited films were investigated by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The composition of the InSe thin film was cross-verified with Rutherford Back Scattering (RBS) and Auger Electron Spectroscopy (AES). The electrical properties of the deposited films have been investigated for the temperature range from 130 to 350 K. Current – Voltage studies, at low voltages (≤1 × 105 Vcm-1) and low temperatures suggests that Mott’s Variable Range Hopping (VRH) conduction mechanism is dominant. The corresponding parameters were calculated. At higher voltages (≥1 × 105 Vcm-1) and higher temperatures, a region of space charge limited current (SCLC) conduction was observed. The analysis of I-V characteristics, based on SCLC measurements yields the following parameters: mobility ( ), trap filled level voltage (VTFL), transition voltage (Vtr), trap concentration (Nt), density of states N(EF), trapping factor ( ).The transition from ohmic to square law behavior was used to calculate all of these parameters..

Keywords

Indium selenide, Structural properties, Electrical properties.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

C. Viswanathan, G. G. Rusu, D. Mangalaraj, Sa. K. Narayandass, J. Yi, CURRENT – VOLTAGE STUDIES ON VACUUM EVAPORATED In70Se30 THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 713-720 (2005)