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DEFECT STRUCTURE AND LUMINESCENCE PROPERTIES OF CdTe BASED COMPOUNDS

P. Fernández1,*

Affiliation

  1. Depto. Física de Materiales, Fac. Físicas, Univ. Complutense, 28040 Madrid, Spain

Abstract

This paper reviews the most prominent features of the defect related cathodoluminescence emissions in CdTe based compounds. Two main problems are dealt with, the influence of dopants and the effect of mechanical damage. Several defect related bands have been observed between 1.4 and 0.78 eV which seem to be strongly influenced by doping and, as deduced from annealing experiments, by migration of defects. Dislocations and Cottrell atmospheres around them seem also to play an important role in the luminescence properties of these materials. Although this review is focused onto the cathodoluminescence measurements, comparison with the results obtained by other techniques (Deep Level Transient Spectroscopy, Photo Induced Current Transient Spectroscopy, Raman Spectroscopy) are referred..

Keywords

CdTe, Luminescence, Defects.

Submitted at: March 3, 2003
Accepted at: May 8, 2003

Citation

P. Fernández, DEFECT STRUCTURE AND LUMINESCENCE PROPERTIES OF CdTe BASED COMPOUNDS, Journal of Optoelectronics and Advanced Materials Vol. 5, Iss. 2, pp. 369-388 (2003)