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DEFECTS INDUCED BY ELECTRON IRRADIATION IN CdSe THIN FILMS

L. Ion1, V. A. Antohe1, S. Antohe1,*

Affiliation

  1. University of Bucharest, Faculty of Physics, P.O.Box: MG-11, Bucharest-Magurele, 077125 Romania

Abstract

Thin films of AIIBVI compounds are potential candidates for the manufacturing of electronic and optoelectronic devices, especially solar cells. In this paper the effects of irradiation with high-energy electrons on structural and electrical properties of CdSe thin films have been investigated. The films, 30 mm thick, were prepared by thermal-vacuum evaporation on glass substrate at a temperature of 220 C. The samples were irradiated with 6-MeV electrons, up to a fluency of 1014 e/cm2. XRD investigation has revealed that the films contain wurtzite type CdSe, (001) preferentially oriented in the growth direction. The defects induced by electron irradiation have been studied using the Space Charge Limited Currents (SCLC) measurements and Thermally Stimulated Currents (TSC) spectroscopy. It was found that the electrical conduction of the samples, both before and after irradiation, is mainly controlled by a defect having an energy level located at 0.38 eV below the conduction band edge, its density was significantly increased as a result of irradiation. The possible origin of this defect is discussed..

Keywords

CdSe, Thin films, Electron irradiation, Defects.

Submitted at: July 12, 2005
Accepted at: July 21, 2005

Citation

L. Ion, V. A. Antohe, S. Antohe, DEFECTS INDUCED BY ELECTRON IRRADIATION IN CdSe THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1847-1858 (2005)