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DENSITY OF LOCALIZED STATES IN HYDROGENATED AMORPHOUS SILICON DETERMINED BY QUASISTATIC CAPACITANCE OF METAL/a-Si:H/SiO2/c-Si STRUCTURES

N. Nedev1,* , E. Manolov1, Tz. Ivanov1, B. Pantchev1, G. Beshkov1, R. Durny2, K. Gmucová3, V. Nadazdy3

Affiliation

  1. nstitute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. Department of Physics, FEI Slovak Technical University, Ilkovi ova 3, 812 19 Bratislava, Slovak Republic
  3. Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, 842 28 Bratislava, Slovak Republic

Abstract

A method for estimating the density of states in the band gap of hydrogenated amorphous silicon (a-Si:H) is presented. It is based on a comparison between the experimentally measured and the calculated quasistatic capacitance-voltage dependence of a metal/a-Si:H/SiO2/c-Si structure..

Keywords

a-Si:H, Defect-pool model, Quasistatic C-V method, Density of states.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

N. Nedev, E. Manolov, Tz. Ivanov, B. Pantchev, G. Beshkov, R. Durny, K. Gmucová, V. Nadazdy, DENSITY OF LOCALIZED STATES IN HYDROGENATED AMORPHOUS SILICON DETERMINED BY QUASISTATIC CAPACITANCE OF METAL/a-Si:H/SiO2/c-Si STRUCTURES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 507-511 (2005)