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DEPOSITION OF SILICON OXIDE THIN FILMS IN TEOS WITH ADDITION OF OXYGEN TO THE PLASMA AMBIENT: IR SPECTRA ANALYSIS

F. Hamelmann1, U. Heinzmann1, A. Szekeres2,* , N. Kirov2, T. Nikolova2

Affiliation

  1. University of Bielefeld, Faculty of Physics, University str. 25, 33615 Bielefeld, Germany
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Silicon oxide thin films deposited on Si substrates in a RF-plasma CVD reactor, using Si(OC2H5)4 (TEOS) as the precursor and oxygen as the gas ambient, were studied by IR spectrophotometry. All depositions were performed at a substrate temperature of 200oC, a plasma power of 20 or 80 W and with a DC-bias of -120 V applied to the Si substrate. The observed IR peaks were assigned to corresponding vibrational modes. Peaks related to Si-H, C-H and OH bond vibrations were also detected. Some degree of porosity exists, resulting in a lower refractive index of the films than that typical for SiO2 material..

Keywords

Thin films, Silicon oxides, Optical properties, IR spectroscopy.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

F. Hamelmann, U. Heinzmann, A. Szekeres, N. Kirov, T. Nikolova, DEPOSITION OF SILICON OXIDE THIN FILMS IN TEOS WITH ADDITION OF OXYGEN TO THE PLASMA AMBIENT: IR SPECTRA ANALYSIS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 389-392 (2005)