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DEPTH PROFILES AND CRYSTALLIZATION BEHAVIOUR OF Mg IONS IMPLANTED INTO Si

Ch. Angelov1,* , Bl. Amov1, A. Kinomura2, E. Goranova3, G. Beshkov4, M.Takai5

Affiliation

  1. Institute for Nuclear Research and Nuclear Energy, Bulgaria
  2. National Institute of Advanced Industrial Science and Technology, Midorigaoka, Ikeda, Osaka 563-8577, Japan
  3. Central Laboratory of Solar Energy and New Energy Sources, Bulgaria
  4. Institute of Solid State Physics, BAS, 72 Tzarigradsko Chaussee Blvd., Sofia 1784, Bulgaria
  5. Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan

Abstract

The samples under investigation were prepared by implantation of Mg+ ions into high resistivity (780 – 850) Ω cm, n-type Si wafers with (111) orientation. Two different doses of Mg+ ions were implanted: D1 = 2×1017cm-2 and D2 = 4×1017cm-2, at an energy of 40 keV. Subsequently, the implanted samples were annealed at a temperature Ta = 500ºC for different times ta = 30, 60 and 300 s. The Mg+ ion concentration distribution was simulated by TRIDYN (dynamic computer simulation code), and the initial profiles of the implanted Mg+ were estimated. The composition and the thickness of the implanted layer, both as-implanted and annealed, were evaluated from the computer simulations of the measured Rutherford backscattering profiles, and were compared with the TRIDYN simulation..

Keywords

24Mg+ ion implantation, RBS, Computer simulation.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Ch. Angelov, Bl. Amov, A. Kinomura, E. Goranova, G. Beshkov, M.Takai, DEPTH PROFILES AND CRYSTALLIZATION BEHAVIOUR OF Mg IONS IMPLANTED INTO Si, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 465-468 (2005)