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DESIGN AND FABRICATION OF ANISOTROPIC MAGNETORESISTIVE MICROSENSOR ON OXIDIZED SILICON WAFER

J. Neamu1,* , W. Kappel1, V.-V. Alecu1, E.-A. Patroi1

Affiliation

  1. Advanced Research Institute for Electrical Engineering (ICPE-CA), Splaiul Unirii 313, Bucharest, Romania

Abstract

In this paper is presented a contribution towards the developing candidate magnetic sensors. Using the anisotropic magnetoresistive effect we have designed an anisotropic magnetoresistive microsensor for the detection of small magnetic fields. The high values of resistance and the strong control of the flow current direction to the magnetic anizotropy axes were obtained by using conventional photoetching, resulting a bridge of thin layer permalloy resistance. We apply bias magnetic fields with opposed bias directions to adjacent arms of the bridge, in order to create the necessary asymmetry resulting the unbalance of the bridge when a external magnetic field is applied..

Keywords

Anisotropic magnetoresistance, Thin film, Permalloy.

Submitted at: May 11, 2004
Accepted at: June 22, 2004

Citation

J. Neamu, W. Kappel, V.-V. Alecu, E.-A. Patroi, DESIGN AND FABRICATION OF ANISOTROPIC MAGNETORESISTIVE MICROSENSOR ON OXIDIZED SILICON WAFER, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 983-986 (2004)