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Determination of the density of localized states in (Ge20Se80)0.90Sn0.10 glassy alloy

R. SINGH1, S. K. TRIPATHI2, S. KUMAR1,*

Affiliation

  1. Department of Physics, Christ Church College, Kanpur-208001, India
  2. Centre of Advanced study in physics, Panjab University, Chandigarh-160014, India

Abstract

The present paper reports the d. c. conductivity measurements at high electric fields in vacuum evaporated thin films of (Ge20Se80)0.90Sn0.10glassy alloy. Current-Voltage (I-V) Characteristics have been measured at various fixed temperatures. In this sample, at low electric fields, ohmic behavior is observed. However, at high electric fields (E~104V/cm), non ohmic behavior is observed. An analysis of the experimental data confirms the presence of space charge limited conduction (SCLC) in the glassy material studied in the present case. From the fitting of the data to the theory of SCLC, the density of defect states (DOS) near Fermi level is calculated. The role of Sn as an impurity element in binary Ge20Se80 glassy alloy is also discussed..

Keywords

Thin films, Chalcogenide glasses, Ge-Se-Sn, Space charge limited conduction, Density of localized states.

Submitted at: June 8, 2006
Accepted at: July 20, 2006

Citation

R. SINGH, S. K. TRIPATHI, S. KUMAR, Determination of the density of localized states in (Ge20Se80)0.90Sn0.10 glassy alloy, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1345-1348 (2006)