"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Dielectric properties in germanium doped chalcogenide glasses

S. KUMAR1, M. HUSAIN1, M. ZULFEQUAR1,*

Affiliation

  1. Department of Physics, Jamia Millia Islamia, New Delhi- 110025, India

Abstract

The temperature and frequency dependence of dc conductivity and dielectric parameters have been measured in a- (Se80Te20) 100-xGex (x = 0, 2.5, 5 and 15 %) glasses in the temperature range (290-400K) and frequency range (120 Hz to 100 kHz). On the bases of observed results, dielectric dispersion is evidenced when Ge is incorporated in the a-Se-Te system. These results are explained on the basis of dipolar type dielectric dispersion. It is also observed that the dc conductivity decreases and the activation energy increases on incorporation of the Germanium in this system..

Keywords

Amorphous semiconductor, Dielectric constant, Dielectric loss, dc conductivity, Activation energy, Dielectric relaxation.

Submitted at: June 8, 2006
Accepted at: Sept. 18, 2007

Citation

S. KUMAR, M. HUSAIN, M. ZULFEQUAR, Dielectric properties in germanium doped chalcogenide glasses, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 9, pp. 2743-2749 (2007)