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DYNAMICS OF SIMULTANEOUS MEASUREMENTS OF HALL AND MAGNETORESISTANCE EFFECTS IN LIQUID METALS AND SEMICONDUCTORS

M. Ogita1,* , T. Ito1, M. Isai1, I. Mogi2, S. Awaji2, K. Yokoo3

Affiliation

  1. Faculty of Engineering, Shizuoka University, Hamamatsu 432-8561, Japan
  2. IMR, Tohoku University, Sendai 980-8577, Japan
  3. RIEC, Tohoku University, Sendai 980-8577, Japan

Abstract

In the present paper the Hall measurement in the liquid state of metals, using two-frequency method, ac-dc method and simultaneous method will be described. The Hall effect has been measured in Hg and Ga, both solid and liquid state. We have also measured magnetoresistance and Hall effect in InSb single crystal in which magnetoresistance appears even in low magnetic field and Si in which magnetoresistance do not appear clearly. In order to investigate the magnetic field dependence of galvanomagnetic effects in metals (in solid and liquid state) and semiconductors, the measurement in high magnetic field up to ±9 [T] were also performed..

Keywords

Hall effect, Magnetoresistance, Liquid, Solid, Two-frequency, Ac-dc method.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

M. Ogita, T. Ito, M. Isai, I. Mogi, S. Awaji, K. Yokoo, DYNAMICS OF SIMULTANEOUS MEASUREMENTS OF HALL AND MAGNETORESISTANCE EFFECTS IN LIQUID METALS AND SEMICONDUCTORS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 677-685 (2005)