R. ROY¹, V. S. CHOUDHARY¹, M. K. PATRA¹, A. PANDYA^1,*

Abstract

Electrical and optical properties of as-grown and annealed films of selenium, grown on glass substrate by thermal evaporation technique at room temperature, have been studied. The as-grown films show variation in resistivity ranging from ~0.44x106 to ~3.78x106 Ω-cm and the activation energy of ~0.86 eV in temperature range 483 to 573 K. The optical band gap of films has been determined from the transmittance and reflectance spectra taken with the help of spectrophotometer in the wavelength range of 350-900 nm at room temperature. The optical band gap of as-grown films has been found to have direct band gap of ~1.76 eV and a blue shift has been observed for the band gap when their average grain size reduced from ~53 to ~21 nm with increase in annealing temperature, followed by rapid cooling. X-ray diffraction pattern of the films confirmed that all the as-grown films have polycrystalline structure and there is no improvement in crystallinity, rather a reduction in average grain size after annealing..

Keywords

Thin films, Selenium, Activation energy, Blue shift, Annealing.

Submitted at: March 10, 2006
Accepted at: July 20, 2006

Citation

R. ROY, V. S. CHOUDHARY, M. K. PATRA, A. PANDYA, Effect of annealing temperature on the electrical and optical properties of nanocrystalline selenium thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1352-1355 (2006)

• Download Fulltext
• Downloads: 66 (from 61 distinct Internet Addresses ).

• Scientometry
• Fast publication
• Old Site

• journals@inoe.ro
• (+40) 021-457 57 58
• (+40) 021-457 45 22
• 409 Atomistilor Str.
  077125 Magurele,
  Ilfov, Romania