"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

EFFECT OF BISMUTH ON THE ELECTRICAL PROPERTIES OF a-Ge20Se80 GLASSES

G. Singh1, J. Sharma1, A. Thakur1, N. Goyal1, G. S. S. Saini1, S. K. Tripathi1,*

Affiliation

  1. Centre of Advanced Study in Physics, Panjab University, Chandiharh-160 014, India

Abstract

The present paper reports the effect of Bi impurity (low ~ 4 at. % and high ~ 10 at. %) on the ac conductivity ( ac) of a-Ge20Se80 glass. Frequency dependent ac conductance and capacitance of the samples over a frequency range of 100 Hz to 50 kHz has been taken in the temperature range of 268 K to 360 K. At frequency 2 kHz and temperature 298 K, the value of ac conductivity ( ac) decreases at low concentration of Bi (4 at. %). However, the value of ac increases at higher concentration of Bi (10 at. %). The ac conductivity is proportional to s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. The dielectric constant (k) slightly decreases at low Bi concentration and increases at higher Bi concentration. These results have been explained on the basis of some structural changes at low and higher concentration of Bi impurity..

Keywords

Chalcogenides, Hopping conduction, Defect states.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

G. Singh, J. Sharma, A. Thakur, N. Goyal, G. S. S. Saini, S. K. Tripathi, EFFECT OF BISMUTH ON THE ELECTRICAL PROPERTIES OF a-Ge20Se80 GLASSES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2069-2076 (2005)