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EFFECT OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF µµµµPCVD AND PECVD SILICON NITRIDE THIN FILMS

V. Bakardjieva1, G. Beshkov2, P. Vitanov1,* , Z. Alexieva1

Affiliation

  1. Central Laboratory for Solar Energy and New Energy Sources
  2. Institute of Solid State Physics, BAS, Blvd Tzarigradsko Chaussee 72, 1784 Sofia, Bulgaria

Abstract

Thin silicon nitride films have been deposited on p-Si (100) substrates using optimised standard technological conditions in micro pressure chemical vapour deposition ( PCVD) and plasma enhanced chemical vapour deposition (PECVD) reactors at 760 oC and 380 oC respectively. The as-deposited films were annealed by rapid thermal annealing (RTA) at 800, 1000, 1200 and 1400 oC for varying annealing times: 15 -180 sec. The FTIR spectra showed that the Si-N characteristic peak moves to higher frequencies with annealing temperature increase. The etch rates in concentrated HF acid depends strongly on RTA temperature. The effect of RTA conditions on the dielectric strength, fixed charge density and hysteresis width has been determined..

Keywords

Silicon nitride films, FTIR, Etch rates, C-V measurements.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

V. Bakardjieva, G. Beshkov, P. Vitanov, Z. Alexieva, EFFECT OF RAPID THERMAL ANNEALING ON THE PROPERTIES OF µµµµPCVD AND PECVD SILICON NITRIDE THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 377-380 (2005)