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EFFECTS OF THERMAL ANNEALING AND LONG-TERM AGEING ON ELECTRONIC DEFECTS IN CdSe THIN FILMS

D. Nesheva1,* , S. Reynolds2, Z. Aneva3, C. Main4, Z. Levi3

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. University of Abertay Dundee, School of Computing and Advanced Technologies, Bell Street, Dundee DD1 1HG, U.K.
  3. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  4. University of Dundee, Division of Electronic Engineering and Physics, Nethergate, Dundee DD1 4HN

Abstract

Defect distributions in CdSe thin films, ‘as deposited’, following thermal annealing, and after 10 years’ storage under room conditions are investigated. Steady-state photoconductivity measurements at low temperatures suggest a decrease in the density of ‘slow’ recombination centres following annealing or storage. Transient photocurrent and thermally stimulated current spectroscopies reveal a peak in the density of states at 0.65 eV below the conduction band edge in the as-deposited film. This broadens and shifts towards the conduction band edge on annealing. Stored films exhibit an almost flat defect distribution, which may result from a combination of both types of defect. Raman scattering measurements suggest that both storage and annealing result in increased structural order..

Keywords

CdSe thin films, Photoconductivity, Thermally stimulated currents, Defect states.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

D. Nesheva, S. Reynolds, Z. Aneva, C. Main, Z. Levi, EFFECTS OF THERMAL ANNEALING AND LONG-TERM AGEING ON ELECTRONIC DEFECTS IN CdSe THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 517-520 (2005)