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EFFECTS OF TUNGSTEN ADDITION ON CRYSTALLIZATION, MAGNETIC AND ELECTRICAL TRANSPORT PROPERTIES OF AMORPHOUS Fe81-xWxSi9B10 ALLOYS

N. Sulitanu1,* , F. Brînza1

Affiliation

  1. Department of Solid State Physics and Theoretical Physics, Faculty of Physics, “Al. I. Cuza” University, 11 Carol I Blvd., 700506 Iasi, Romania

Abstract

The work is focussed on the influence of tungsten on magnetization, electrical transport resistivity, crystallization process and conditions of its optimisation in amorphous Fe-W-Si B alloy. The samples were melt-quenched ribbons 24 mm in thickness and 12-15 mm in wide. The structure was checked by XRD. The microstructure was evidenced for as-cast and annealed sample by TEM and ED. The magnetization and electrical resistivity were made in situ during sample annealing between 300 K and 1100 K. The Curie temperature was estimated from the inflexion point of the first rapid demagnetization. For electrical resistivity measurements the conventional four-probe DC technique was used. The crystallization temperatures were determined from temperature dependence of magnetization and electrical resistivity. In the samples without or with low W content, lower than 5.5 at %, the precipitation of a-Fe in a first crystallization step started earlier than it was expected and it was accelerated probably by the formation of a solid solution phase saturated with bor. During second crystallization step Fe (W)-B small crystallites larger in size but less in the percentage than of a-Fe (W) phase are formed. The W addition at the expense of Fe causes the Curie temperature of Fe-W-Si-B alloys to decrease significantly..

Keywords

Fe-W-B-Si alloys, Amorphous state, Nanocrystallization, Microstructure, Magnetization, Electrical resistivity.

Submitted at: April 5, 2005
Accepted at: Nov. 24, 2005

Citation

N. Sulitanu, F. Brînza, EFFECTS OF TUNGSTEN ADDITION ON CRYSTALLIZATION, MAGNETIC AND ELECTRICAL TRANSPORT PROPERTIES OF AMORPHOUS Fe81-xWxSi9B10 ALLOYS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 6, pp. 3069-3074 (2005)