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ELECTRIC FIELD EFFECT ON THE BINDING ENERGY OF A NON HYDROGENIC DONOR IMPURITY IN A SQUARE QUANTUM WELL WIRE

S. Dalgic1,* , M. Ulas1, B. Ozkapi1

Affiliation

  1. Department of Physics, Trakya University, 22030 Edirne, Turkey

Abstract

We have used a variational technique to calculate the effect of an electric field on the non hydrogenic binding energy of a donor impurity in a square GaAs/Ga1-x AlxAs quantum well wire (QWW). The non-hydrogenic binding energy of the donor impurity was calculated by the variational method as a function of applied electric field, the wire radius and donor impurity position. The results show that the non-hydrogenic binding energy of donar impurity located around the centre is larger than that of the hydrogenic binding energy. In this work, the variational method employed is capable of giving all the correct trends for impurity binding energies as a function of applied electric field, impurity position and screening effect..

Keywords

Shallow donors, Square quantum well wires, Electrical field.

Submitted at: May 23, 2005
Accepted at: July 21, 2005

Citation

S. Dalgic, M. Ulas, B. Ozkapi, ELECTRIC FIELD EFFECT ON THE BINDING ENERGY OF A NON HYDROGENIC DONOR IMPURITY IN A SQUARE QUANTUM WELL WIRE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2041-2046 (2005)