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ELECTRICAL AND OPTICAL PROPERTIES OF SbxS1–x ALLOYS

T. Shchurova1,* , N. Savchenko1, V. M. Rubish2, V. V. Rubish1, A. Spesivykh1, I. Opachko1

Affiliation

  1. Uzhgorod National University, Department of Engineering, 13 Kapitulna St., 88000 Uzhgorod, Ukraine
  2. Uzhgorod Scientific-Technological Center of the NASU Institute for Information Recording, 4 Zamkovi Skhody Str., Uzhgorod 88000, Ukraine

Abstract

The valence-band maximum, the conduction-band minimum,, the position of the electronic states in quasi band gap formed by homopolar Sb-Sb bonds and clusters Sn for chalcogenide glassy alloys of SbxS1–x (0.35 £ x £ 0.45) family have been calculated on the basis of the method suggested by W.A. Harrison. Spectral dependences of the photoelectron quantum yield, absorption coefficient, photoluminescence and photoconduction for Sb0.40S0.60 have been presented. The photoemission threshold, the optical band gap, and the energies of the radiative and band-to-band transitions have been determined from these dependences, respectively. The experimental and calculated energy parameters have been correlated. Experimental and calculated concentration dependences of the optical band gap, thermal activation energy and energy position of the peak in photoconduction spectra for Sb0.35S0.65, Sb0.38S0.62, Sb0.40S0.60, Sb0.43S0.57, and Sb0.45S0.55, have been given..

Keywords

Chalcogenide semiconductors, Electronic structure, Optical properties.

Submitted at: May 24, 2005
Accepted at: July 21, 2005

Citation

T. Shchurova, N. Savchenko, V. M. Rubish, V. V. Rubish, A. Spesivykh, I. Opachko, ELECTRICAL AND OPTICAL PROPERTIES OF SbxS1–x ALLOYS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2021-2027 (2005)