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ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF HETEROJUNCTIONS ON THE BASE OF Cu(InGa)Se2

P. Ketrush1, P. Gashin1, V. Nikorich1,* , V. Suman1

Affiliation

  1. Faculty of Physics, Moldova State University, 60, A.Mateevici str., Chisinau, MD 2009, Republic of Moldova

Abstract

CdS films deposited by hot wall technique on mica were used as substrates for Cu(InGa)Se2 deposition. Two methods were used for the deposition of Cu(InGa)Se2 films: a) vacuum thermal evaporation from a single source and b) “flash” evaporation. The obtained films were of p-type conductivity with hole concentration varied from 2×1018 cm-3 to 6×1020 cm-3 depending on the fabrication method. The structures Cu(InGa)Se2–CdS were divided into two groups: the structures of type I having the CdS film thickness from 1.6 m to 2.8 m and the structures of type II having the CdS film thickness from 0.6 m to 0.8 m. It was established that the direct/reverse current ratio is 8-16. For the first type heterostructures the diffusion potential is 1.2–1.8 V and for the second type is 0.2–0.34 V. The Cu(InGa)Se2 CdS fotosensitivity is situated in the wavelength region from 0.51 m to 1.1 m and is determined by the electron-hole pair generation in both materials..

Keywords

Solar cells, Heterojunction, Electrical and photoelectrical properties.

Submitted at: June 9, 2004
Accepted at: March 23, 2005

Citation

P. Ketrush, P. Gashin, V. Nikorich, V. Suman, ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF HETEROJUNCTIONS ON THE BASE OF Cu(InGa)Se2, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 795-800 (2005)