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Electrical and photoelectrical properties of isotypic y y 1 x x 1 3 2 Se CdS S Zn Cd O In − − / / heterostructures

H. M. MAMEDOV1,* , S. I. AMIROVA1

Affiliation

  1. Department of Physical Electronics, Faculty of Physics, Baku State University, 370148, Z. Khalilov str., 23, Baku, Azerbaijan

Abstract

In − − heterostructures are prepared by the electrodeposition method. The dependence of the electric and photoelectric parameters of heterostructures on the composition of S Zn Cd x x 1− (0 ≤ x ≤ 0.8) and y y 1 Se CdS − (0.3 ≤ y ≤ 0.9) films and heart treatment condition were investigated. It was found that annealing the heterojunctions 8.0 2.0 6.0 4.0 3 2 Se CdS /S Zn Cd / O In at Ta = 380 ÷ 400 °C for τa = 7 min in air leads to an improving of the electric and photoelectric parameters. The open circuit photovoltage and short circuit photocurrent density of cells 8.0 2.0 6.0 4.0 3 2 Se CdS /S Zn Cd / O In at illumination 1500 lx and temperature 300 K were Voc = 0.48 V, Jsc = 5.9 ÷ 6.3 mA/cm2, respectively..

Keywords

Heterostructures, In2O3/Cd-Zn-S/Cd-S-Se, Electrical and photoelectrical properties.

Submitted at: May 8, 2006
Accepted at: July 20, 2006

Citation

H. M. MAMEDOV, S. I. AMIROVA, Electrical and photoelectrical properties of isotypic y y 1 x x 1 3 2 Se CdS S Zn Cd O In − − / / heterostructures, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1452-1455 (2006)