"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

ELECTRICAL CHARACTERIZATION OF MIS STRUCTURES WITH SOL-GEL TiO2(La) DIELECTRIC FILMS

S. Simeonov1,* , E. Kafedjiiska1, A. Szekeres1, C. Parlog2, M. Gartner2

Affiliation

  1. Institute of Solid State Physics, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria
  2. Institute of Physical Chemistry, Spl. Independente 202, Bucharest 77208, Romania

Abstract

The capacitance-voltage and current-voltage characteristics of MIS structures with sol-gel TiO2 (180-230 nm) films doped with lanthanum are studied. The dielectric constant of the undoped films is found to be 60.5, whereas for the TiO2(La) films with a molar ratio of La/Ti = 0.028 it increases up to 93.5. Further increase of the La/Ti molar ratio, however, leads to a decrease of the dielectric constant. The fixed dielectric charge is of the order of 1011 cm-2 and the trap density at the TiO2(La)/Si interface is of the order of 1012 eV cm-2. Trap-assisted tunneling of electrons in TiO2 conduction band is established as the transport mechanism..

Keywords

Sol-gel deposition, Titanium oxide, Electrical characteristics, Electron-transport mechanism.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Simeonov, E. Kafedjiiska, A. Szekeres, C. Parlog, M. Gartner, ELECTRICAL CHARACTERIZATION OF MIS STRUCTURES WITH SOL-GEL TiO2(La) DIELECTRIC FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 545-548 (2005)