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ELECTRICAL PROPERTIES OF AMORPHOUS As2Se3-GeSe2-SnTe THIN FILMS

S. Parvanov1,* , V. Vassilev2, L. Aljihmani2

Affiliation

  1. Central Research Laboratory, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
  2. Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria

Abstract

Electrical properties of vacuum evaporated thin As2Se3-GeSe2-SnTe films have been studied. The thermal activation energy of the films with different SnTe concentration is determined by the temperature dependence of conductivity. From electrical investigations some basic physical characteristics of the investigated semiconductor films were calculated applying the Christov's theory for injected electron currents. Effective electron mass (mc/m) in the conduction band, relative dielectric permittivity e of the films and the electron work function (c) at the Al/(As2Se3-GeSe2-SnTe) interface as a function of SnTe content were determined..

Keywords

Chalcogenide glass, Amorphous thin film, Electrical properties.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

S. Parvanov, V. Vassilev, L. Aljihmani, ELECTRICAL PROPERTIES OF AMORPHOUS As2Se3-GeSe2-SnTe THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1299-1304 (2005)