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ELECTRICAL PROPERTIES OF PLASMA-ASSISTED CVD DEPOSITED THIN SILICON OXYNITRIDE FILMS

A. Szekeres1,* , S. Simeonov1, A. Gushterov1, T. Nikolova1, F. Hamelmann2, U. Heinzmann2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. University of Bielefeld, Faculty of Physics, University str. 25, 33615 Bielefeld, Germany

Abstract

The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 oC in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films..

Keywords

RF plasma CVD deposition, Silicon oxynitride, Oxide charges, Interface traps, Oxide resistivity.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

A. Szekeres, S. Simeonov, A. Gushterov, T. Nikolova, F. Hamelmann, U. Heinzmann, ELECTRICAL PROPERTIES OF PLASMA-ASSISTED CVD DEPOSITED THIN SILICON OXYNITRIDE FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 553-556 (2005)