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ELECTRICAL PROPERTIES OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITED GERMANIUM SELENIDE FILMS

N. Qamhieh1,* , G. J. Adriaenssens2

Affiliation

  1. Department of Physics, U.A.E. University, Al-Ain, P.O. Box: 17555, U.A.E.
  2. University of Leuven, Halfgeleiderfysica, Celestijnenlaan 200D, B-3001 Leuven, Belgium

Abstract

A study of electrical properties of PECVD a-Ge-Se films has been conducted. Steady-state conductivity measurements show that PECVD samples are different from thermally evaporated (TE) layers. The conductivity in the former is thermally activated with much lower activation energy Es, never above 0.7 eV. Moreover, the data do not fit with Meyer-Neldel relation which is universally observed in amorphous semiconductors. PECVD of Ge-Se films may provide a way of changing their electrical properties, while essentially preserving the optical ones with respect to TE films. The presence of hydrogen could be responsible for these changes..

Keywords

Plasma-enhanced chemical vapour deposition, Germanium selenide, Electrical properties.

Submitted at: May 17, 2005
Accepted at: July 21, 2005

Citation

N. Qamhieh, G. J. Adriaenssens, ELECTRICAL PROPERTIES OF PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITED GERMANIUM SELENIDE FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1785-1791 (2005)