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ELECTRICAL PROPERTIES OF ZnSe CRYSTALS DOPED WITH TRANSITION METALS

A. N. Avdonin1, G. V. Kolibaba1, D. D. Nedeoglo1,* , N. D. Nedeoglo1, V. P. Sirkeli1

Affiliation

  1. Department of Physics, State University of Moldova, A. Mateevich str. 60, MD-2009 Kishinev, Moldova

Abstract

Hall effect in n-ZnSe single crystals doped with Cu, Ag or Au transition metals is studied in the temperature range from 55 to 500 K. A sign inversion of the Hall coefficient at T>300 K is observed for the crystals doped with Cu, in contrast to the samples doped with Ag and Au. The measurements of electrical parameters show that silver manifests itself as an usual compensating acceptor impurity (AgZn), while gold is an amphoteric impurity, which forms both donors (Aui) and simple (AuZn) or associative acceptors. The model, which explains the existence of the Hall coefficient anomaly in n-ZnSe:Zn:Cu crystals and its lack in n ZnSe:Zn:Ag and n-ZnSe:Zn:Au crystals, is proposed. It is shown that Cu exists in n-ZnSe in two charge states: CuZn + (d10) and CuZn ++ (d9), while Ag and Au exist in a singly charged state: AgZn + (d10) and AuZn + (d10)..

Keywords

Hall effect, Charge state, Amphoteric impurity.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

A. N. Avdonin, G. V. Kolibaba, D. D. Nedeoglo, N. D. Nedeoglo, V. P. Sirkeli, ELECTRICAL PROPERTIES OF ZnSe CRYSTALS DOPED WITH TRANSITION METALS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 733-737 (2005)