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Electron transport in amorphous (GeSe5)1-xBx films

P. PETKOV1,* , S. PARVANOV1, T. PETKOVAa2

Affiliation

  1. Department of Physics, Thin Films Technology Lab, University of Chemical Technology & Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia, Bulgaria
  2. Institute of Electrochemistry and Energy Systems, Bulgarian Academy of Sciences, Acad. G. Bonchev Bl. 10, 1113 Sofia, Bulgaria

Abstract

The charge-transport behavior of (GeSe5)1-xBx films (x = 0, 10, 20 mol.%) have been studied and their dependence on field, temperature and composition has been observed. The investigations have been carried out at room temperature and below room temperature in temperature range 173 - 293 K and applied electric fields up to 108 Vm-1 on sandwich Al/Chal/Al structures. The I-V characteristics show a linear (ohmic) dependence at low voltage and non-ohmic dependence at higher voltage region. In the intermediate region electron transport behaviors are determined by space charge limited conduction (SCLC) mechanism. Quantitative information about the transport parameters has been derived as a function of film composition applying the relevant SCLC theory. The magnitude and energy distribution of the space charge has been obtained by the method of Manfredotti for current- voltage characteristics analyses. Electron localized states have been obtained in the region from 0.32 to 0.90 eV. The density of localized states varies with film composition from 5.9 × 1023 to 4.1 × 1026 m-3..

Keywords

Chalcogenide glasses, Thin films, Electrical properties, Band gap structure.

Submitted at: Jan. 3, 2006
Accepted at: March 23, 2006

Citation

P. PETKOV, S. PARVANOV, T. PETKOVAa, Electron transport in amorphous (GeSe5)1-xBx films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 785-788 (2006)